| 摘要 |
In the case of a bistable memory cell, preferably of integrated technology, having two switching branches (T1, T3; T2, T4) which can be connected in parallel with each other to a first potential (V1) or a reference potential (Vo) and are diagonally connected, in each case contain at least one switch element which can be driven in accordance with an item of information to be stored and at which in each case an output signal can be picked off, the two switching branches (T1, T3; T2, T4) can be connected to a second potential (V2), different from the first potential (V1), and the output terminals (Q1, Q2) of the two switching branches (T1, T3; T2, T4) can in each case be connected to the second potential (V2) in accordance with the item of information to be stored when the first potential (V1) is applied to the switching branches (T1, T3; T2, T4). <IMAGE>
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