发明名称 |
GATE TURN-OFF THYRISTOR |
摘要 |
A plurality of strip-shaped emitter layers (5) on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode (8) is in ohmic contact with a part of a base layer (4) which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode (80) is provided to be connected to said gate electrode. At this time, said gate collecting electrode is provided at such a position as to balance the potential differences produced by gate currents respectively corresponding to side and outside of said gate collecting electrode. |
申请公布号 |
DE3370899(D1) |
申请公布日期 |
1987.05.14 |
申请号 |
DE19833370899 |
申请日期 |
1983.11.09 |
申请人 |
HITACHI, LTD. |
发明人 |
NAGANO, TAKAHIRO;YATSUO, TSUTOMU;OIKAWA, SABURO;HORIE, AKIRA |
分类号 |
H01L29/423;H01L29/74;H01L29/744;(IPC1-7):H01L29/74;H01L29/60 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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