| 摘要 |
PURPOSE:To prevent disadvantage such as decrease in resistance value, by projecting light, whose energy is close to the value at an energy gap or smaller than said value in a material constituting a semiconductor layer, in an ion implanted region. CONSTITUTION:On an insulating substrate 1, a polycrystalline Si layer 2 is formed as a polycrystalline semiconductor layer. Then, photoresist 4 is applied and a specified pattern is formed. Ions are implanted, and the polycrystalline Si layer 2 is made to be amorphous layer. Impurities are introduced in this ion implanted region 3. When the laser beam of an Nd:YAG laser is projected, the ion implanted region 3 is activated, and a low resistance region 6 is obtained. In a region 5, in which ions are not implanted, temperature is not increased, and low temperature is maintained. The region becomes a high resis tance region 7. IN the low resistance region 6, diffusion is suppressed, and reproducibility of dimensional accuracy is improved. A width La' of the high resistance region 7 is not narrower than a width La of the region 5, in which ions are not implanted. Therefore, disadvantage such as decrease in resistance value can be prevented.
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