| 摘要 |
PURPOSE:To manufacture an incoherent semiconductor laser with good reproducibility by applying the optimum range of a current value fed to a saturated absorption range formed at a part of an optical guide. CONSTITUTION:A semiconductor laser element has a double hetero junction structure having a clad layer 7, an active layer 8, a clad layer 9 sequentially laminated on a semiconductor substrate 6, an N-type electrode 11 and a P-type electrode 12 are mounted on a cap layer 10 and the substrate 6, and a current blocking layer 13 is formed by removing in a V-shaped groove of striped shape to form a current passage. An optical guide 1 having a resonator length Lt to become a laser oscillating unit has a saturable absorption region 2 of length Lg and a main region 3, and separated by the groove 4. A branching resistor Rg is externally attached to the electrode terminal (a) of the region 2, and when the ratio of the current Ig flowing to the region 2 to the total current It is set to a range of 0.01<(Ig/It)<(2Lg/3Lg), self-excitation resonance occurs, thereby extending a spectral width.
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