| 摘要 |
PURPOSE:To make it possible to grow polysilicon or metal (e.g., tungsten) selectively only on a part of an insulating film, in a CVD method utilizing a silicon ion implanting method, by implanting ions of Si or Si compound in a substrate surface layer at a high concentration. CONSTITUTION:As an interlayer insulating film, an Si3N4 film 11 is grown by a CVD method. Resist is applied on the film 11 and patterning is performed. With the resist film 12 as a mask, a groove 13 is formed in the Si3N film by etching. When silicon ions Si<+> are implanted, the seeds of Si 14 are implanted in the exposed surface of the Si3N4 film at the bottom of the groove 13. The Si<+> is removed from the resist film 12 by, e.g., ashing. When a wiring material, e.g., polysilicon, is grown by a pressure reduced CVD method, polysilicon 15 is grown in the groove with the Si 14 as the seeds, but the polysilicon is not grown on the Si3N4 film, which is masked with the resist film 12. Then, an insulating film 16 is formed, and a second wiring layer 17 is formed on the film 16. Then the second wiring layer 17 is flattened, and no step difference is present at all.
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