发明名称 MAGNETRON SPUTTERING APPARATUSAND A METHOD FOR FORMING A MAGNETIC THINFILM ON THE SURFACE OF A SUBSTRATE
摘要 There is disclosed a magnetron sputtering apparatus including a sputtering chamber, a substrate and target disposed within the sputtering chamber to form a desired space therebetween, device for applying a voltage between the substrate and target, and device for producing a magnetic field; and the apparatus comprises the magnetic field-producing device adapted to excite a magnetic field so that the direction of the magnetic field may be inverted on the magnetic symmetry axis within the space. The magnetron sputtering apparatus of the present invention can form metal films having no crack without heating of the substrate and also form a magnetic recording film layer having an increased coercive force perpendicular to the surface of the film.
申请公布号 DE3370830(D1) 申请公布日期 1987.05.14
申请号 DE19833370830 申请日期 1983.04.28
申请人 KABUSHIKI KAISHA TOSHIBA;TOKUDA SEISAKUSHO, LTD. 发明人 NISHIKAWA, REIJI C/O TOKYO SHIBAURA DENKI K.K.;SATOYAMA, SHOZO C/O TOKUDA SEISAKUSHO, LTD.;ITO, YOSHINORI C/O TOKUDA SEISAKUSHO, LTD.;JYO, HIDETAKA C/O TOKUDA SEISAKUSHO, LTD.
分类号 C23C14/36;C23C14/35;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/36
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