发明名称 METHOD FOR TREATMENT OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To increase the number of the wafers which can be treated at a time by preventing the mutual contact of the wafers by carrying the plural semiconductor wafers in or out of a treatment part while planting and holding them on a boat in a state of inclination of the same direction and the same angle to the boat. CONSTITUTION:Plural grooves 1c formed in a boat 1 are inclined in the same direction and by the same angle. Semiconductor wafers 2 leaving against there are inclined only by a vertical angle theta (about 1 deg.-4 deg.). As a result, the wafers 2 stood in the grooves 1c are inclined in the same direction and by only the same angle and this state is maintained, so that the wafers 2 do not come in contact mutually even if they are oscillated when they are carried in or out of a treatment part. Accordingly, the fusion in a high-temperature treatment part does not occur and the adverse influence of dust due to the cracking at carrying the boat is eliminated. Furthermore, because an interval between the adjacent groves 1c can be narrower, the number of the wafers which can be treated at a time exceedingly increases and a treating efficiency can be remark ably improved.</p>
申请公布号 JPS62104121(A) 申请公布日期 1987.05.14
申请号 JP19850242849 申请日期 1985.10.31
申请人 NEW JAPAN RADIO CO LTD 发明人 HIRAKI KOJI;HOSHI SUSUMU
分类号 H01L21/223;H01L21/22;H01L21/67;H01L21/673;H01L21/68 主分类号 H01L21/223
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