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发明名称
ION BEAM IMPLANT SYSTEM.
摘要
Système de formation de charge et dispositif (20) permettant d'introduire des matériaux (24) servant de source d'ions dans le vaporisateur à source d'ions (10) d'un instrument d'implantation ionique.
申请公布号
EP0221056(A1)
申请公布日期
1987.05.13
申请号
EP19850902838
申请日期
1985.05.17
申请人
J.C. SCHUMACHER COMPANY
发明人
RIAHI, SHANTIA
分类号
H01J27/02;H01J37/08;H01J37/317;H01J49/04;(IPC1-7):H01J27/02;H01J37/18
主分类号
H01J27/02
代理机构
代理人
主权项
地址
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