MESFET TRANSISTOR WITH AIR LAYER BETWEEN THE CONNECTIONS OF THE GATE ELECTRODE AND THE SUBSTRATE AND THE RESPECTIVE FABRICATION PROCESS

摘要

In the new structure of the Schottky barrier field effect MESFET transistor, consisting of a substrate and three electrodes (source, gate and drain), the electrical resistance of the gate is practically zeroed by using an electrode having the shape of a continuous sheet which bypasses a portion of source and created an air layer between its connections. The fabrication process basically includes a first photomasking, evaporation of the metallization layer on photoresist material, growing, a second photomasking and etching of total metallization and removal of the two photoresists.