METHOD AND APPARATUS FOR GRINDING THE SURFACE OF A SEMICONDUCTOR WAFER

摘要

A method and an apparatus for grinding the surface of a semiconductor wafer by moving a holding table and a grinding wheel relative to each other in a predetermined direction substantially parallel to the surface of the semiconductor wafer held onto the holding table to cause the grinding wheel which is rotated to act on the surface of the semiconductor wafer held onto the holding table. The semiconductor wafer is placed on the holding table with its angular position being regulated so as to direct its crystal orientation in a predetermined direction with respect to the holding table, and thus the grinding direction of the surface of the semiconductor wafer by the grinding wheel is set in a predetermined relationship to the crystal orientation of the semiconductor wafer. At the periphery of the semiconductor wafer is formed a deformed portion arranged at a predetermined angular position with respect to its crystal orientation, and the holding table has a vacuum suction area made of a porous material and shaped substantially correspondingly to the shape of the semiconductor wafer.