| 摘要 |
PURPOSE:To enhance the bondability of a semiconductor device by employing as a wire bonding material a wire material which is formed of 5-325wt.ppm of boron and the residue of copper to prevent S from being densified and segregated on a copper ball. CONSTITUTION:A wire material which contains 5-325wt.ppm of boron and the residue of copper is used as a wire bonding material 4. Thus, this can prevent S from being densified and segregated on a copper ball to enhance the bondability. |
