| 摘要 |
PURPOSE:To form carrier confinement regions in the lateral direction by the first crystal growth process by a method wherein semiconductor layers, whose compositions are mutually different, are formed at a region on a step difference and flat parts by irradiating molecular beams from the vertical direction to a face of the substrate and a specific direction inclined at an angle to the face of the substrate. CONSTITUTION:The respective growth of a buffer layer 9, an n type clad layer 10, a p type clad layer 12 and a cap layer 13 is performed while a substrate 1 is made to revolve, while the growth of a third layer 11 is performed after the revolution of the substrate 1 was stopped. An Al molecular beam source 13 is inclinably (beta angle) disposed to the normal direction of the substrate 1. For example, the inclination is set at a condition of beta>=alpha to the inclination (alpha) of a striped step difference 2. For satisfying the condition of beta>=alpha, Al molecular beams are not made to incide in a step difference region A and GaAs not containing Al is grown in an active region 11A. Al molecules reach regions (flat parts)B other than the step difference and carrier confinement regions 11B consisting of AlyGa1-yAs containing Al are formed. |
