发明名称 |
Solid state image sensing device |
摘要 |
A solid state image sensor including a photoelectric transducing diode (PD) formed on an n-type semiconductor substrate (1) and a MOS transistor (TRs). A signal photoelectrically transduced by the diode (PD) is amplified by a pnp-type transistor (TRa) formed on the substrate and between the diode (PD) and the MOS transistor (TRa). The amplified signal is read out by the MOS transistor. The source (41) of the MOS transistor is connected to the emitter (21) of the pnp-type transistor partly by a polysilicon (91).
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申请公布号 |
US4665422(A) |
申请公布日期 |
1987.05.12 |
申请号 |
US19840627469 |
申请日期 |
1984.07.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRAO, TADASHI;MAEKAWA, SHIGETO |
分类号 |
H01L27/146;H01L29/45;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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