发明名称 |
Solid state image sensor with signal amplification |
摘要 |
A solid state image sensor has vertical BCCD, semiconductor substrate and photoelectric transducer formed in thickness direction of the semiconductor substrate by comprising SIT (static induction transistor), wherein holes generated by incident light are stored in the photoelectric transducing part, and electrons of a number as many as m-times of the number of the stored holes are read out from the semiconductor substrate to the vertical BCCD, and thus sensitivity multiplication is obtained.
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申请公布号 |
US4665325(A) |
申请公布日期 |
1987.05.12 |
申请号 |
US19850695222 |
申请日期 |
1985.01.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA, TAKAHIRO;FUJIWARA, YOSHIHIRO |
分类号 |
G11C27/04;H01L27/146;H01L27/148;H01L31/112;H04N5/355;H04N5/372;(IPC1-7):H03K3/42;H01L29/78;H01L27/14;H01L31/00 |
主分类号 |
G11C27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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