| 摘要 |
This invention concerns a voltage control type variable resistor using a metal oxide semiconductor (MOS) and other metal insulated semiconductors (MIS) wherein an offset gate MIS transistor having smaller threshold voltage and a self-aligned gate MIS transistor having a larger threshold voltage than that of said offset gate MIS transistor in absolute value are formed in parallel on one insulated substrate. The sources, the drains and the gates of both transistors are connected in common. A voltage control type MIS variable resistor described above, can be improved to have a wider linear range of resistance and voltage.
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