发明名称 MONOLITHIC INTEGRATED CIRCUIT
摘要 PURPOSE:To make output high level potential or output low level potentials nearly equal between emitter follower circuits of the same structure but different from the operating current by selecting the total sum of emitter areas of the 2nd transistor (TR) group used for the 2nd emitter follower circuit having equal circuit function to that of the 1st emitter follower circuit and having an operating current being N times of a basic current value to a prescribed value. CONSTITUTION:In using the current of the 1st emitter follower circuit as a basic current, the current of the 2nd emitter follower circuit is twice of the value. In such a case,two emitter follower TRs Q18, Q19 are connected in parallel so that the emitter area of the emitter follower TRs constituting the 2nd emitter follower circuit is twice the total sum of the emitter area of the emitter follower TRs constituting the 1st emitter follower circuit. As a result, the emitter current density of emitter follower TRs Q16, Q18, Q19 is equal.
申请公布号 JPS62101122(A) 申请公布日期 1987.05.11
申请号 JP19850242045 申请日期 1985.10.28
申请人 NEC CORP 发明人 MISAWA HIROYUKI
分类号 H03K19/086;H03K19/173 主分类号 H03K19/086
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