| 摘要 |
PURPOSE:To offset compressive force and expansion force, and to manufacture a wafer having no warpage by forming the same semiconductor thin-films on both surfaces of a substrate. CONSTITUTION:Silicon such as double-side polished silicon is used as a substrate 1, and a gallium-arsenic layer 2 is shaped onto both surfaces through an organic metallic decomposition vapor phase growth method. Accordingly, crystalline semiconductor thin-films cannot be formed onto both surfaces of the substrate by a device which has been used, but the thin-films can be shaped by employing an improved device in which a reaction gas flows on both surfaces of the substrate as shown in the figure.
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