| 摘要 |
PURPOSE:To obtain a magnetostatic-wave microwave element using a YIG single crystal thin-film containing Pb for simultaneously making a change into a thick-film and low DELTAH (ferromagnetic resonance half-value width) compatible by mixing Pb contained in flux mainly comprising PbO-B2O3 into the single crystal film. CONSTITUTION:A gadolinium.gallium.garnet single crystal substrate is used, a single crystal film mainly comprising yttrium.iron.garnet is grown on the substrate through a liquid-phase epitaxial method while Pb contained in flux mainly comprising PbO-B2O3 is mixed into the single crystal film, and an LPE single crystal film in which the content of Pb is kept within a range of 1wt% or 2.25wt%, the lattice constant of the substrate is made larger than that of the formed single crystal film and the difference of these lattice constants is brought to 9X10<-3>Angstrom or less is employed. According to this invention, a YIG thick-film having low DELTAH can be formed by positively utilizing the mixing of Pb into flux even when No.5 additional element is not used actively with the exception of Fe, Y, Pb and B, thus manufacturing a magnetostatic-wave microwave element having low loss by employing the YIG thick-film.
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