| 摘要 |
PURPOSE:To produce a blue light emitting device of stable electrical characteristics and stable luminous characteristics with a low cost by forming a ZnSe thin film on an Si substrate by epitaxial growth with a ZnSxSe1-x buffer layer put in between. CONSTITUTION:A graded ZnSxSe1-x layer 15 and an N-type ZnSe layer 16 are formed on an Si substrate 14 by epitaxial growth and an insulating layer 17 is formed on the layer 16. A part of the insulating layer 17 is removed by etching so as to include a part of the N-type ZnSe layer 16 and an N-type ohmic electrode 18 is formed on the exposed part of the N-type ZnSe layer 16. Then a gold electrode 19 is formed on the insulating layer 17. The electrodes are lead out by bold lead wires 20 and 21. The ZnSxSe1-x graded layer is formed by a method wherein, after a ZnS0.917Se0.083 layer is formed on the Si substrate 14 as the 1st buffer layer, (x) is gradually changed from 0.917 to 0 to form the 2nd buffer layer and then the ZnSe layer is formed. With this constitution, a blue color light emitting device with stable quality can be obtained. |
