| 摘要 |
PURPOSE:To obtain a semiconductor laser whose cladding layers, active layer and cap layer can be successively formed by a series of vapor phase deposition processes by providing a step-forming region on the surface of a substrate. CONSTITUTION:A protrusion 3, which is extended along the direction of a stripe and whose two ends are positioned inner than the end planes of a laser, is provided on the surface of a substrate 1. The protrusion 3 serves as a means of forming steps in the respective layers formed by vapor phase deposition. The 1st cladding layer 4 is formed on the surface of the substrate 1 by vapor phase deposition. A part of the surface of the cladding layer 4 corresponding to the protrusion 3 rises. An active layer 5 is formed on the cladding layer 4 by vapor phase deposition. A part 6 of the active layer 5 corresponding to the protrusion 3 is higher than the other part and functions as an effective active region. The 2nd cladding layer 7 is formed on the active layer 5 by vapor phase deposition. A cap layer 8 is formed on the cladding layer 7 by vapor phase deposition. A part of a metal layer 10, which is formed on the cap layer 8 as an electrode, corresponding to the protrusion 3 also rises. A stripe electrode nearly corresponds to the rising part 11.
|
