| 摘要 |
PURPOSE:To increase the length of a single crystal growth layer through lateral solid-phase epitaxy by forming an implanting region for neutral ions, a dosage thereof is increased in succession in one direction, on a semiconductor layer shaped onto a substrate and thermally treating the implanting region. CONSTITUTION:An SiO2 layer 2 is formed onto an silicon substrate 1, and a crystal silicon thin-film 3 is brought in to an amorphous state. A mask layer 8 is applied and shaped selectively extending over a predetermined distance d2 from the end section of an opening 6 on the silicon thin-film 3, and silicon ions Si<+>9 in a high dosage are implanted into a region in which the mask layer 8 is not formed. Consequently, a region 10 in a low dosage and a region 11 in the high dosage are shaped to the silicon thin-film 3. A single crystal is grown to the region 11 in the high dosage from the region 10 in the low dosage in the silicon thin-film 3, using the substrate 1 as a seed through heat treatment. Since no random nucleus is generated yet in the region 11 in the high dosage at a time when the region 10 in the low dosage is all turned into the single crystal at that time, single crystal growth further progresses to the region 11 in the high dosage. Accordingly, a single crystal growth layer 3A having a long distance D of 10mum is acquired.
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