| 摘要 |
PURPOSE:To remarkably reduce parasitic resistance by a method wherein a metal thin film with a desired pattern is provided on an insulating thin film provided on a substrate and polycrystal line Si is provided thereon for single crystallization by energy beam annealing. CONSTITUTION:An insulating thin film 5 such as a silicon nitride film is provided on a semiconductor substrate 1 such as Si and a metal thin film 6 with a desired pattern such as MoW is provided on the thin film 5. Next, polycrystal Si 3 is accumulated on the whole parts of the thin films 5 and 6 and the polycrystal Si 3 is single crystallized or the particle diameter is increased by aiming energy beams 4 such as laser beams at the polycrystal Si 3 then a semiconductor element is formed in the Si layer. This decreases the parasitic resistance between a metal electrode and an active region and a semiconductor device with good element characteristics can be obtained. |
