| 摘要 |
PURPOSE:To obtain an electron ray resist and UV resist which have excellent resistance to dry etching, can deal with both of wet development and dry development and have excellent resolution by using a photoresist compsn. consisting of a specific silane homopolymer and specific polyolefin sulfone. CONSTITUTION:This photoresist compsn. consists of the copolymer consisting of the silane homopolymer expressed by the formula (I) or >=2 kinds of the silane homopolymers which are expressed by the formula (I) and are different from each other and the polyolefin sulfone having the repeating unit expressed by the formula (II). In the formulas, R1 and R2 are the group selected from the group consisting of a monovalent aliphat. group of 1-24C, monovalent arom. group and monovalent alicyclic group, n denotes 10-3,000 integer, R3 denotes an olefinic hydrocarbon of 2-20C and m denotes 20-3,000 integer. The resist pattern obtd. in the above-mentioned manner exhibits the good resolu tion and excellent dry etching characteristic as the electron ray resist and is satisfactorily usable even in the production stage of high-density VLSIs. |
