| 摘要 |
PURPOSE:To shorten the time from the selection of a data line selecting element to the amplifying operation of a main amplifier circuit so as to realize high- speed readout of data, by installing an auxiliary amplifier circuit to common data lines and making the propagating speed of data higher. CONSTITUTION:Input-output terminals of dynamic memory cells MC1-MC6 are respectively connected with corresponding data lines (D1, D'1) - (Dn, D'n) and the data lines are connected to common data lined CD and CD'. One of the common data lines CD and CD' is connected with the input terminal of a main amplifier circuit 7 and output terminal of a write circuit 8 and the other is connected with an auxiliary amplifier circuit 9. The control signal phima1 of the MOSFET Q13 of the auxiliary amplifier circuit 9 becomes high in level at timing earlier than the control signal phima2 of the main amplifier circuit 7 and, when data are given from a data line nearer to the auxiliary amplifier circuit 9 than the main amplifier circuit 7, the data are amplified by the auxiliary amplifier circuit 9 and the speed for reaching the main amplifier circuit 7 is accelerated. |
