| 摘要 |
PURPOSE:To prevent a malfunction even when output potential from a transistors reaches (-) by mutually arranging the directions of the stripes of collector diffusion layers in adjacent transistors in the rectangular directions. CONSTITUTION:Transistors Q1, Q2...are disposed in such a manner that slender type collector N-type diffusion layers 4, base P-type diffusion layers 5 and emitter N<+> type diffusion layers are all formed in a striped manner in N-type isolation regions 3 mutually isolated by P-type isolation sections 3 on a substrate 1, and the directions of the stripes of the collector diffusion layers are directed mutually at a right angle in adjacent transistors for outputs. That is, the transistors are arranged as Q1, Q2, Q1 Q3, Q2 Q4, Q3 Q4. When the collector potential of one output transistor Q1 reaches (-) and there is high potential in the adjacent transistor Q2 at that time, the hFEX of a parasitic transistor QX generated between two transistors Q1, Q2 is determined by collector opposite areas,thus lowering hFEX to a low level (such as approximately 0.1). |
