| 摘要 |
PURPOSE:To increase efficiency to take out light, by concentrating a current in the central part of semiconductor multilayer containing a P-N junction. CONSTITUTION:In a semiconductor layer surround by a groove, a P-N junction 9 is formed which acts as a light-emitting part. The side surface of a P-InP layer 2 in a semiconductor multilayer 12 containing a P-N junction being a current path is eliminated and made hollow, so that the current flowing in the P-N junction 9 is constricted here. Thus the current concentrates in the central part of the P-N junction 9, thereby the current density is made high in the central part of the P-N junction 9, and the light emission intensity increases. Consequently, it is made possible to take out the light with high efficiency, and the light output is extremely increased. Further, the current density in the side surface of the P-N junction 9 is low, so that the nonemitting surface recombination in the side surface of the groove decreases as compared with conventional ones, and the light emission efficiency increases. |
