| 摘要 |
PURPOSE:To prevent the warpage caused by thermal expansion by sealing a semiconductor element chip to a ceramic laminated type leadless package and combining a dissipation member and the chip with a main body of the package through an auxiliary plate of high heat conductivity. CONSTITUTION:A semiconductor (chip) 10 is attached to a base plate 17 consisting of the material having an approximate heat expansion coefficient and good heat conductivity, for example, Mo, W and etc. by a brazing material of Au-Si. A stud 19 made of the material having much better heat conductivity, e.g., Cu, Al and etc. is attached by a brazing material, e.g. Cu-Ag eutectic alloy to the base plate 17. Attachment of the base plate 17 to a ceramic base 1 is effected by bridging with an auxiliary plate 18 which alleviates a difference in heat expansion of both. For the auxiliary plate 18, the material which has the heat expansion coefficient that is in the intermediary of that of the base plate 17 and the ceramic base 1 and has relatively low elasticity modulus and elastic limit strength, e.g., Fe-Ni-Co alloyed substance, 42 alloy and etc. are suitable. |
