| 摘要 |
PURPOSE:To improve the crystalline property of an excitation part, and increase the reliability of a semiconductor light emitting element, by controlling the generation location of defect in a compound semiconductor layer. CONSTITUTION:On a (100) P-type gallium . arsenic (GaAs) substrate 1, an inverse mesa type protrusion is formed, and then an internal current construction layer 3 of N-type gallium arsenic (GaAs) is formed by liquid phase epitaxial growth. In this process, it is possible to suppress the growth of an internal current constriction layer 3 on the inverse mesa type protrusion 2 by the suitable selection of growth conditions. In the internal current constriction layer 3, a stripe part 4 is formed in parallel to the inverse mesa type protrusion and in the direction of the inverse mesa. The second liquid phase epitaxial growth is performed to form a double hetero-structure. At this time, defects generated in an indium . gallium . arsenic . phosphorus (InGaAsP) active layer 6 concentrate in a defect concentration part 7 corresponding to the upper part of the strip 4. The crystal of the upper part 8 of the inverse mesa type protrusion 2 which acts as an excitation part can be extremely excellent in quality. |
