发明名称 SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To settle a problem of an increase in electric resistance resulting from thinning of a base electrode layer, by forming the base electrode layer of a superconductor. CONSTITUTION:The material of a base electrode layer 8 is a superconductor of a Pb Te compound obtained by doping thallium (Tl) at 1.0atom%. When cooled down to a temperature 1K, the base electrode layer 8 is put in a superconducting state, and sheet resistance lowers below the limit (0.01OMEGA) of detection of a measuring instrument. Since the base electrode 8 is formed of a superconducting material, the electric resistance of the base electrode layer can be made zero by setting the operating temperature of an element below the superconductivity transition temperature (Tc) of the material of the base electrode. Therefore, this constitution enables the suppression of an increase in the electric resistance resulting from the thinning of the base electrode layer, which is a problem of a conventional MBT element, and thus the base electrode layer by far thinner than the base electrode layer of the conventional MBT element can be formed.
申请公布号 JPS6298769(A) 申请公布日期 1987.05.08
申请号 JP19850237574 申请日期 1985.10.25
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TAKEI KOJI;OKAMOTO MINORU;NAKAMURA TAKAYUKI;MAEDA YASUSHI
分类号 H01L29/68;H01L29/76;H01L39/22 主分类号 H01L29/68
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