| 摘要 |
PURPOSE:To eliminate the need for the external fitting of a resistor to a gate electrode on multi-parallel connection by forming a gate series resistor into a field effect type semiconductor device with the path of main currents in the longitudinal direction. CONSTITUTION:A gate series resistor 9 is shaped onto an insulating film 4 between a gate wire electrode 51 and a gate bonding pad 52, and the bonding pad 52 is isolated from the gate wire electrode 51. A polysilicon resistor is used as the gate series resistor 9, and a resistance value can be controlled by employing an ion implantation technique. Since a resistor connected in series with a gate electrode for a field effect type semiconductor device is formed into the semiconductor device, the switching rate of a region operating by a field effect is relaxed by a gate series-resistance component in the same manner as an externally fitted resistor, thus preventing abnormal oscillation on operation through multi-parallel connection. |
