| 摘要 |
PURPOSE:To raise the controllability and reproducibility of the lifetime of carriers and facilitate the control of temperature dependence, by providing iron, gold and/or platinum in a semiconductor layer to control the lifetime of carriers. CONSTITUTION:Iron ions are implanted at the rate of 1X10<13>cm<-3> into a GTO thyristor from its reverse side. The thyristor is then annealed at a temperature of 1000 deg.C under an atmosphere of nitrogen for 1 hour. A gold film is evaporated at a thickness of 600Angstrom on the reverse side and diffused at a temperature of 890 deg.C. The recovery time Trr of GCS with gold and iron diffused is almost constant independently of the diffusion time of the gold. The lifetime tau is affected by the gold in the main at low temperature but by the iron in the main at high temperature. Diffusing both iron and gold in a semiconductor device is preferable to flatten its forward voltage VF. Since plural kinds of killers are used, the control of the lifetime is facilitated. |
