| 摘要 |
PURPOSE:To equalize the requirements for heattreatment by a method wherein a non-linear introducing gas pre-heating tube is provided on the inner end of a heat resisting tube in connection to a gas introducing tube at the end of a heat resisting tube into which wafers are inserted. CONSTITUTION:An open type heat resisting tube 1 is inserted into a heating furnace 2 through the intermediary of a heat equalizing plate 3 and atmospheric gas is introduced from an atmospheric gas introducing pipe 4 to the furnace 2 to heattreat semiconductor wafers 10 internally fixed on the tube 1. An introducing gas pre-heating tube 11 is provided to maximize its length with its length inside the tube 1 minimized by means of e.g. making the tube 11 spiral. One end of the pre-heating tube 11 is connected to the introducing pipe 4 while the other end pierces a partition 12 to jet the atmospheric gas jetting from the partition 12 to a homogeniger 5. On the other hand, the space from an end of the tube 1 accommodating the pre-heating tube 11 to the partition 12 is filled with N2 gas as necessary and a baffle plate 13 is provided. Through these procedures, any dispersion of characteristics of the wafers 10 due to one time heattreatment may be reduced. |
