| 摘要 |
<p>An improved means and methods for forming multilayer metal electronic devices (10) where the intermetal dielectric (18) is formed of a three layer sandwich. The first metal layer (13) is covered with a dielectric layer (14) formed using plasma assisted oxide deposition or low pressure chemical vapor deposition. This first dielectric layer (14) is covered by a second dielectric layer (15) formed using a spun-on glass. The third dielectric layer (16) is formed by chemical vapor deposition or plasma deposition and is then covered with the second metal layer (17). Substantially improved step coverage is obtained and delamination between the intermetal dielectric (18) and the metal layers (13, 17) is avoided. The dielectric may be tapered-etched for contact holes.</p> |
