| 摘要 |
PURPOSE:To reduce a dark current and an operating voltage of the photoconductive body by sticking the 1st layer composed of a film contg. a noncrystalline silicon, etc., as a main component to the 2nd layer composed of a film comprising a germanium carbide contg. an atom belonging to the group IIIb atoms of the periodic table as the main component. CONSTITUTION:The 1st layer comprises the film composed of the non-crystalline silicon contg. a hydrogen atom or a halogen atom, the film composed of the non-crystalline silicon and germanium, or the film composed of the non- crystalline germanium as the main component respectively. The 2nd layer comprises the film composed of the germanium carbide contg. the atom belonging to the group IIIb atoms of the periodic table, such as the boron or the aluminum atom as the main component. The titled body is obtd. by sticking the 1st layer and the 2nd layer at an interface thereof. Thus, as the atom belonging to the group IIIb atoms of the periodic table is incorporated, the titled body having the low dark current and the low operating voltage is obtd. The titled body may be used for a electrophotographic sensitive body or a image pickup device. |
