发明名称 Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask
摘要 Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask. The lithography mask 8a according to the invention is made from SiOx x being a number such that 0 < x < 2. This mask is made by covering a substrate 6 with a layer 8 of SiOx and by irradiating this layer through an irradiation mask 10, representing in positive the image of the lithography mask 8a, by means of ultraviolet radiation 12. <IMAGE>
申请公布号 FR2589593(A1) 申请公布日期 1987.05.07
申请号 FR19850012197 申请日期 1985.08.09
申请人 PICHOT MICHEL 发明人
分类号 G03F1/08;G03F1/54;G03F7/004;(IPC1-7):G03F1/00;G03F7/00;H01L21/72;H01L21/308 主分类号 G03F1/08
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