摘要 |
Lithography mask, process for manufacturing this mask and process for manufacturing an integrated circuit with the aid of the said mask. The lithography mask 8a according to the invention is made from SiOx x being a number such that 0 < x < 2. This mask is made by covering a substrate 6 with a layer 8 of SiOx and by irradiating this layer through an irradiation mask 10, representing in positive the image of the lithography mask 8a, by means of ultraviolet radiation 12. <IMAGE>
|