发明名称 |
A trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor. |
摘要 |
<p>A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielectrically isolated region of silicon material resulting from the formation of an isolation trench in the silicon. The trench is filled with a plastic material, such as polyimide. The capacitor is formed by the isolated region of silicon material (14) which functions as the first capacitor plate, a doped polysilicon layer (22a) provided on the vertical walls of the mesa serving as the second capacitor plate and a thin dielectric layer (21) interposed between the two plates serving as the capacitor's dielectric. Since the polysilicon is wrapped around the periphery of the mesa as a coating on the vertical sidewalls thereof, it gives rise to a large storage capacitance without an increase in the cell size. </p> |
申请公布号 |
EP0220392(A2) |
申请公布日期 |
1987.05.06 |
申请号 |
EP19860110459 |
申请日期 |
1986.07.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GOTH, GEORGE RICHARD;MALAVIYA, SHASHI DHAR |
分类号 |
H01L27/04;G11C11/403;H01L21/762;H01L21/822;H01L21/8229;H01L21/8242;H01L27/10;H01L27/102;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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