发明名称 ULTRAFINE CU ALLOY WIRE FOR BONDING WIRE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide the titled ultrafine Cu wire having the low hardness approximately equal to the hardness of an ultrafine Au wire by incorporating specific ratios of Mg, Ca, Be, In, Ge, Ga, and Tl as alloy components into Cu and specifying the content of inevitable impurities. CONSTITUTION:The ultrafine Cu alloy wire made of the compsn. contg. <0.1-1ppm 1 or >=2 kinds among Mg, Ca, Be, In, Ge, Ga, and Tl as the alloy components and consisting of the balance Cu and <=4ppm inevitable impurities is prepd. Such ultrafine Cu alloy wire is a soft material having about 34-35 Vickers hardness in the stock state and since the deterioration in the characteristics with lapse of time as is observed with a semi-hard material, i.e., ultrafine high-purity copper material wire for semiconductor devices no only in the thoroughly annealed state but also the semi-hard material state.
申请公布号 JPS6296629(A) 申请公布日期 1987.05.06
申请号 JP19850235987 申请日期 1985.10.22
申请人 MITSUBISHI METAL CORP 发明人 HOSODA NAOYUKI;UCHIYAMA NAOKI;ONO TOSHIAKI
分类号 C22C9/00;H01L21/60;H01L23/49 主分类号 C22C9/00
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