发明名称 |
FORMATION OF DEPOSITED FILM |
摘要 |
PURPOSE:To easily obtain a uniform deposited film having high quality by forming a deposited film on a substrate with a precursor produced from a gaseous starting material and a gaseous oxidizing agent contg. halogen as a source for feeding a film forming element so as to simplify the control of the quality of a film. CONSTITUTION:A gaseous starting material (a chain silane compound) and a gaseous oxidizing agent contg. halogen and having oxidizing action on the starting material are introduced into a reaction space, where they are brought into chemical contact with each other to produce plural kinds of precursors including an excited precursor. A deposited film is formed on a substrate with one or more kinds of such precursors as sources for feeding a deposited film forming element. |
申请公布号 |
JPS6296675(A) |
申请公布日期 |
1987.05.06 |
申请号 |
JP19850237006 |
申请日期 |
1985.10.23 |
申请人 |
CANON INC |
发明人 |
ISHIHARA SHUNICHI;HANNA JUNICHI;SHIMIZU ISAMU |
分类号 |
G03G5/08;C23C16/24;C23C16/30;C23C16/44;C23C16/452;H01L21/205;H01L31/0248;H01L31/08 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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