发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To easily obtain a uniform deposited film having high quality by forming a deposited film on a substrate with a precursor produced from a gaseous starting material and a gaseous oxidizing agent contg. halogen as a source for feeding a film forming element so as to simplify the control of the quality of a film. CONSTITUTION:A gaseous starting material (a chain silane compound) and a gaseous oxidizing agent contg. halogen and having oxidizing action on the starting material are introduced into a reaction space, where they are brought into chemical contact with each other to produce plural kinds of precursors including an excited precursor. A deposited film is formed on a substrate with one or more kinds of such precursors as sources for feeding a deposited film forming element.
申请公布号 JPS6296675(A) 申请公布日期 1987.05.06
申请号 JP19850237006 申请日期 1985.10.23
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;HANNA JUNICHI;SHIMIZU ISAMU
分类号 G03G5/08;C23C16/24;C23C16/30;C23C16/44;C23C16/452;H01L21/205;H01L31/0248;H01L31/08 主分类号 G03G5/08
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