| 摘要 |
<p>In a process for producing a photoelectric conversion device having a junction between hydrogenated amorphous silicon and an electrode made of ITO or the like, on the surface of which a passivation film made of silicon oxide is provided, the passivation film being formed by the plasma CVD method in an atmosphere of mixed gas prepared by admixing an excess of oxygen-containing gas, such as nitrous oxide, carbon dioxide, oxygen, or the like, with silane gas. The surface of the photoelectric conversion device is covered with a silicon oxide film formed in accordance with the plasma CVD method at a temperature of less than 300 DEG C. in an atmosphere of mixed gas consisting of silane gas and an excess of oxygen-containing gas.</p> |
