发明名称 Method of synthesizing cubic system boron nitride.
摘要 <p>The present invention is a method of synthesizing crystals of cubic system boron nitride by using a synthesizing vessel divided into a plurality of synthesizing chambers separated by one or more partition layers. This method comprises the steps of: preparing the above stated synthesizing vessel to heat the synthesizing vessel with a temperature gradient in the specified direction, the above stated chambers being placed in order according to the temperature gradient; placing, in the above stated chambers, a plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources according to the temperature gradient; placing the BN sources in contact with portions of the solvents heated at relatively high temperatures in heat treatment and placing at least a seed crystal in each of portions of the solvents heated at relatively low temperatures in the heat treatment; and growing at least a cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel under conditions of ultra-high pressure and high temperature with the above stated temperature gradient.</p>
申请公布号 EP0220462(A2) 申请公布日期 1987.05.06
申请号 EP19860112787 申请日期 1986.09.16
申请人 SUMITOMO ELECTRIC INDUSTRIES LIMITED 发明人 YAZU, SHUJI C/O ITAMI WORKS OF SUMITOMO ELECT. IND;SUMIYA, HITOSHI C/O ITAMI WORKS OF SUMITOMO ELECT.;DEGAWA, JUNJI C/O ITAMI WORKS OF SUMITOMO ELECT.
分类号 B01J3/06;C30B9/00 主分类号 B01J3/06
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