发明名称 |
Method of synthesizing cubic system boron nitride. |
摘要 |
<p>The present invention is a method of synthesizing crystals of cubic system boron nitride by using a synthesizing vessel divided into a plurality of synthesizing chambers separated by one or more partition layers. This method comprises the steps of: preparing the above stated synthesizing vessel to heat the synthesizing vessel with a temperature gradient in the specified direction, the above stated chambers being placed in order according to the temperature gradient; placing, in the above stated chambers, a plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources according to the temperature gradient; placing the BN sources in contact with portions of the solvents heated at relatively high temperatures in heat treatment and placing at least a seed crystal in each of portions of the solvents heated at relatively low temperatures in the heat treatment; and growing at least a cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel under conditions of ultra-high pressure and high temperature with the above stated temperature gradient.</p> |
申请公布号 |
EP0220462(A2) |
申请公布日期 |
1987.05.06 |
申请号 |
EP19860112787 |
申请日期 |
1986.09.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LIMITED |
发明人 |
YAZU, SHUJI C/O ITAMI WORKS OF SUMITOMO ELECT. IND;SUMIYA, HITOSHI C/O ITAMI WORKS OF SUMITOMO ELECT.;DEGAWA, JUNJI C/O ITAMI WORKS OF SUMITOMO ELECT. |
分类号 |
B01J3/06;C30B9/00 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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