| 摘要 |
<p>A two-terminal thin film semiconductor photodetector comprises a dopant-modulated channel in the photodetector thin film that provides for long electron lifetime and, as a result, has equivalent or superior photosensitivity compared to depletion mode TFT devices without the need for or utilization of a gate electrode and the application of a gate voltage. The two-terminal thin film photodetector comprises, e.g., a semiconductor thin film of crystalline silicon on an insulating substrate (12) having two terminal regions (26, 28) and a thin film light-sensitive channel formed between the two terminal regions. The channel comprises three distinct doped regions in the thin film: a region of first conductivity type (14) formed immediately adjacent to the substrate, a second region (16) of opposite conductivity type formed over the first region, and a third region (18) of the same conductivity type as the first region, formed over the second region. The doped regions form p-n junctions (15, 17) located parallel to the surface of the substrate between the first and second regions and the second and third regions. These junctions function as a charge carrier separation means. The channel functions as fully depleted in the dark and becomes photoconducting when illuminated.</p> |
