| 摘要 |
PURPOSE:To obtain the titled body having an improved anti-environment property by composing a photoconductive layer of a laminate comprising the 1st layer made of an n-type amorphous silicon contg. a hydrogen atom, and the 2nd layer made of the microcrystalline silicon or the amorphous silicon contg. the hydrogen atom. CONSTITUTION:A whole or a part range of the photoconductive layer 31 is composed of the n-type amorphous silicon (a-Si), the laminate made of the n-type a-Si and the a-Si of the intrinsic semiconductor (i-type), the laminate made of the n-type a-Si and the microcrystalline silicon or the laminate made of the n-type a-Si and the a-Si contg. at least one kind element selected from a carbon, an oxygen and a nitrogen atoms. In the titled body of a functional partition type, the n-type a-Si is used to the electrostatic charge generating layer. The n-type a-Si is composed of the a-Si doped with an element belonging to the group V elements of the periodic table, such as N, P, As, Sb and Bi, etc. Thus, the titled body having the improved anti-environment property is obtd. |
