| 摘要 |
PURPOSE:To decrease parasitic capacitance, by providing an electrode or a wiring, which is connected to the cathode electrode of a diode, between the anode of the diode and an element or a wiring, which is arranged in the vicinity of the diode. CONSTITUTION:This device is composed of a GaAs substrate 510, an interlayer insulating film 509, a cathode electrode 501 of a diode, which is used as a coupling capacitor, and a metal wiring 506, which is connected to the electrode 501. A numeral 502 indicates the anode electrode of the diode, a numeral 504 an N-type active layer and a numeral 503 an N<+> high concentration active layer. The electrode 501 is ohmic-contacted with the active layers 503 and 504. The electrode 502 forms a Schottky junction together with the active layer 503. A numeral 505 indicates a metal wiring, which is arranged in the vicinity of the diode. The shielding wiring 506 is contacted with the electrode 501 through a contact hole 507 and contacted with the GaAs substrate 510 through a contact hole 508. In this structure, parasitic capacitance between the metal wiring 505 and the anode electrode 502 of the diode can be decreased, and the area of the diode can be decreased. |
