| 发明名称 |
IMPURITY DIFFUSION PROCESS FOR PRODUCING A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto are fused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance.
<??>Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.</p> |
| 申请公布号 |
EP0028678(B1) |
申请公布日期 |
1987.05.06 |
| 申请号 |
EP19800104608 |
申请日期 |
1980.08.05 |
| 申请人 |
HITACHI, LTD. |
发明人 |
YOSHIDA, ISAO;WADA, YASUO;TAMURA, MASAO;MIYAO, MASANOBU;OHKURA, MAKOTO;NATSUAKI, NOBUYOSHI;TOKUYAMA, TAKASHI |
| 分类号 |
H01L27/04;H01L21/22;H01L21/268;H01L21/3215;H01L21/822;H01L29/78;(IPC1-7):H01L21/225 |
主分类号 |
H01L27/04 |
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