发明名称 Photovoltaic device
摘要 The present invention consists of a photovoltaic device and a method of manufacturing thereof, in which first electrode films (12a, 12b, l and 12c) are separately disposed on a plurality of regions (A, B, and C) of the insulated surface of a substrate (10) and semiconductor photoactive film layers (13) and second electrode films (14) are placed in an overlapping manner on the respective first electrode films. The portions of the semiconductor photoactive layers (13) located in the spacing regions (ab and bc) of the respective second electrode films (14) are removed by etching so that a first electrode film (12a) in one adjacent region is partially exposed. The exposed portion (142a) of the contact face of the second electrode film (14a) with the semiconductor photoactive layer (13a) undercut as the result of etching of the semiconductor photoactive layers (13) is removed by etching so that the exposed portion (12ba) of the first electrode film (12a) and the second electrode film ( 14a) in the other adjacent region are electrically connected by a connection electrode film (6ab).
申请公布号 US4663494(A) 申请公布日期 1987.05.05
申请号 US19850755054 申请日期 1985.07.12
申请人 SANYO ELECTRIC CO., LTD. 发明人 KISHI, YASUO;TANIGUCHI, HIROYUKI
分类号 H01L27/142;H01L31/0224;(IPC1-7):H01L27/14 主分类号 H01L27/142
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