| 摘要 |
PURPOSE:To provide a memory function without generating the blooming phenomenon by filling the trap with charges through application of voltage to the gate of MOS structure and reading light quantity information of incident light based on changes in capacitance through discharge with the incident light. CONSTITUTION:An insulating layer 13 is provided on a semiconductor substrate 11 having a deep level and an electrode plate 15 is then formed thereon. The one electrode 15 is connected to the semiconductor substrate 11, while the other electrode 19 to the electrode plate 15. In such MOS capacitance structure, when the light is irradiated under the set state (characteristic point a1, capacitance value Ca1), the electrons restricted in level are released and a value of capacitance C is lowered to Ca2. In this case, since the capacitance value does not become lower than Ca2 or less, the blooming phenomenon which may occur in the additional type sensor such as CCD, MOS sensor does not occur. |
