| 摘要 |
PURPOSE:To lower the power consumption while maintaining the capability of high-speed operation of an I<2>L semiconductor device, by forming an emitter of one of two transistors constituting the device in a region having a concentration of impurity higher than a region where the base of the other transistor is formed. CONSTITUTION:In an I<2>L semiconductor device, an N-type well 13 is formed only in a region of a reverse transistor 3 so as to be contacted with a thick N<+> type buried layer 9 by means of shallow diffusion. Thus, the N-type well 13 has a high concentration of impurity and the transistor obtains a sufficiently high common emitter current amplification factor. Since the base region of a lateral transistor 5 is contacted with an N<-> type epitaxial layer 11, the efficiency of injecting holes from an aluminium wiring layer 31 can be increased and the common emitter current amplification factor of the lateral transistor 5 is also increased. Further, the reversely injecting current (base current) which injects electrons into the emitter is decreased and thus the power consumption can be lowered. |
