发明名称 |
METHOD FOR CONTROL OF SPECTRUM WIDTH OF SEMICONDUCTOR LASER ELEMENT |
摘要 |
PURPOSE:To keep the spectrum width of a semiconductor laser element at a small value steadily by detecting a field distribution in the semiconductor laser element by at least two beam detectors located closely to the semiconductor laser element so as to control the injected current into a phase control region. CONSTITUTION:A field distribution of a distribution feedback DFB region 2 is detected by detecting secondary diffraction beams emitted from the DFB region 2 to the above by first and second beam detectors 9 and 10 which are located closely to the upper part of the DFB region. The light intensity detected the first and second beam detectors 9 and 10 is inputted in a divider 11 where an intensity ratio is detected. The output of this divider 11 is synchronously detected by a lock-in amplifier 12 to obtain a control signal 13 about the injected current into a phase control region 3. According to this control signal 13, the current injected from a second bias circuit 7 to the phase control region 3 is controlled and the spectrum width of an edge plane high reflection type phase control DFB-LD 1 can be kept at the minimum value constantly. |
申请公布号 |
JPS6294995(A) |
申请公布日期 |
1987.05.01 |
申请号 |
JP19850234542 |
申请日期 |
1985.10.22 |
申请人 |
NEC CORP |
发明人 |
EMURA KATSUMI;YAMAGUCHI MASAYUKI |
分类号 |
H01S5/068;H01S5/042;H01S5/0625;H01S5/0687;H01S5/187 |
主分类号 |
H01S5/068 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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