| 摘要 |
PURPOSE:To enable the titled heat treatment device to be subjected to a sbort- period annealing at a uniform temperature under any surface condition by a method wherein the transparent holder retaining a semiconductor wafer and the circumference of a wafer and the holder are covered, and a heat-resistant cover film by which the light for heat source is absorbed is provided. CONSTITUTION:A titanium cover film 4 is heated up by the light of halogen lamps 7-18 in a heat treatment device, and a semiconductor wafer 1 is heated up by the radiant light coming from the cover film 4. Then, the transparent quartz holder 2 retaining the wafer 1, and the wafer 1 are placed in a transparent quartz tube 3, and the entire body is covered by the titanium cover film 4 having excellent heat resistance. A temperature monitoring can be performed accurately by providing a permanent temperature sensor on the cover film 4. Also, the power of the lamps 7-18 is controlled by providing a number of temperature sensors, and a uniform temperature distribution can be provided easily. As a result, the temperature of the wafer can be maintained uniformly even when there is a region having different emissivity of omegaIN/omegaOUT, caused by the difference in thickness of an oxide film, on the wafer surface for the incident light emitted from the lamps and the radiant light sent from the wafer. |
