| 摘要 |
PURPOSE:To improve the saturation characteristics of a transistor without increasing its circuit area, by extending an aluminum wiring of the common collector of a pre-stage transistor and a post-stage transistor to the vicinity of the base region of the pre-stage transistor to make a current pass via the aluminum wiring of low resistance. CONSTITUTION:The electric resistance of N<+> type buried layer 14 from a post- stage transistor 2 to a pre-stage transistor 1 becomes apparently small, because the resistance of an extended aluminum wiring of a collector part is connected in parallel. Generally, the resistance of the aluminum wiring of the collector part is sufficiently small as compared with that of the buried layer, so that only the resistance R1 of the buried layer 14 is dominant. That is, the saturation voltage of transistor 2 V CE2' is given by the relation V CE2'=I3R1+I4R2+VBE 2. The aluminum wiring of collector is extended to the vicinity of base region of the pre-stage transistor 1, so I4R2-0 and V CE2>V CE2' where V CE2' is the saturation voltage. Saturation characteristics of the post-stage transistor 2 can be improved, thereby. |
